Chemistry and Lithography

Level: Advanced Length: 7 hours Format: In-Person Lecture Intended Audience: Scientists, engineers, and technicians who wish to learn more about the chemical basis of lithography are the intended audience. To benefit most effectively from this course, participants should have completed at least a bachelor’s program in chemistry, physics or engineering. Description: This course, based on the next edition of the book with the same title, explores the chemical basis of advanced lithography, which in all its essential aspects is about chemical transformations that are designed to print a relief image of an object on a flat surface. The object may be a mask containing patterns of integrated circuit devices; the flat surface may be a silicon wafer coated with photo- or radiation-sensitive resist, which upon exposure and development, or imprinting (as in the case of imprint resists), or directed self-assembly (as in the case of block copolymer resists), is transformed into the relief image of the mask. Underlying these transformations are distinct chemical reactions that are mediated by electrons. By drawing on fundamental, theoretical and experimental studies of molecular processes in advanced lithography, we will deconstruct lithography into its essential chemical principles. We will examine and show how electrons mediate the photo- and radiation chemistry of exposure processes of resists (be they organic, organometallic, polymeric or inorganic), as well as exposure tool sources (be they mercury arc lamp, laser, electron beam, ion beam, or plasma); colloid chemistry of resist formulation and dissolution (be it for positive tone or negative tone development), wafer and mask cleaning processes; electrochemistry of mask absorber corrosion, electrostatic discharge, and electromigration; surface chemistry of wafer and mask priming, along with thin film interfacial effects; materials chemistry of resists, exposure tool optics, and masks; environmental chemistry of the exposure environment (be it water, air or vacuum), as well as of resist poisoning; process chemistry and modeling of wafer and mask making lithographic unit operations, including substrate priming, coating, exposure, pre- and post-exposure baking, development, and post-exposure stabilization processes; inorganic and organometallic chemistry of mask defect formation and repair, of mask contamination from inorganic salt (haze) crystal growth, carbon deposition and oxidation; and polymer chemistry of directed block copolymer self-assembly. Learning Outcomes: This course will enable you to: - explain the chemical basis of advanced lithography - deconstruct lithography into its essential chemical principles - describe the molecular processes in lithography - identify and describe the chemical reactions associated with each lithographic unit operation - describe the role of electrons in mediating the chemical transformations associated with each lithographic unit operation - model lithographic unit operations and the overall lithographic process - explain directed block copolymer self- assembly chemistry and the significance of Flory-Huggins parameter. Instructor(s): Uzodinma Okoroanyanwu is research associate professor in the department of polymer science and engineering of University of Massachusetts at Amherst in U.S.A. His research interests are broadly geared toward developing printed, flexible, and wearable electronics. He is also the founder and chief executive officer of ALLNANO LLC, a research and development company that specializes in developing and commercializing printed, flexible, flexible hybrid, and wearable electronic instruments and technologies used in molecular diagnostics, as well as in energy storage and environmental monitoring. He worked previously at Advanced Micro Devices, where he spent 12 years conducting research on advanced lithography and on organic polymer memories, and at GLOBALFOUNDRIES, where he spent 4 years conducting research on advanced lithography. He has published extensively on lithography science and technology and on electronic applications of polymers. His most recent books include Molecular Theory of Lithography, Chemistry and Lithography. A holder of 37 U.S patents, he was educated at The University of Texas at Austin, from where he earned the following degrees: Ph.D. physical chemistry (1997), M.S. chemical engineering (1995), M.A. physical chemistry (1994), B.S. Chemistry and Chemical engineering (1991). Event: SPIE Advanced Lithography 2015 Course Held: 22 February 2015